型号 SI4622DY-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET N-CH D-S 30V 8-SOIC
SI4622DY-T1-GE3 PDF
代理商 SI4622DY-T1-GE3
标准包装 2,500
系列 SkyFET®, TrenchFET®
FET 型 2 个 N 沟道(双)
FET 特点 标准
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 8A
开态Rds(最大)@ Id, Vgs @ 25° C 16 毫欧 @ 9.6A,10V
Id 时的 Vgs(th)(最大) 2.5V @ 1mA
闸电荷(Qg) @ Vgs 60nC @ 10V
输入电容 (Ciss) @ Vds 2458pF @ 15V
功率 - 最大 3.3W,3.1W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 带卷 (TR)
其它名称 SI4622DY-T1-GE3TR
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